发明名称 |
Reading circuit for an integrated semiconductor memory device |
摘要 |
A device including a load connected by a selection circuit to a number of bit lines, and a load connected to a reference cell, for detecting the current in the selected bit line and in the reference cell. The load connected to the bit lines comprises a transistor, and the reference load comprises two current paths, each formed by one transistor. One of the two transistors is diode-connected, and the other is switchable by a switching network connected to the gate terminal of the respective transistor, for turning it off when only one reference current path is to be enabled, and for diode-connecting it when both the reference current paths are to be enabled.
|
申请公布号 |
US5627790(A) |
申请公布日期 |
1997.05.06 |
申请号 |
US19950408589 |
申请日期 |
1995.03.22 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
GOLLA, CARLA M.;OLIVO, MARCO;PADOAN, SILVIA |
分类号 |
G11C11/409;G11C7/00;G11C7/14;G11C16/06;G11C16/28;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|