| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a low operating voltage and a long service life using a highly reliable II-VI compound semiconductor. SOLUTION: A p-type Alx Ga1-x As buffer layer 2 and a p-type (Alx Ga1-x )y In1-y buffer layer 3 are formed sequentially on a p-type GaAs substrate 1 and then II-VI compound semiconductor layers, i.e., a p-type ZnSe buffer layer 5, a p-type ZnMeSSe clad layer 7, a p-type ZnSSe optical waveguide layer 8, a ZnCdSe active layer 9, an n-type ZnSSe optical waveguide layer 10, an n-type ZnMgSSe clad layer 11, etc., are formed thereon to constitute a semiconductor light emitting element. In this regard, a p-type GaAs crystal defect suppression layer 4 is provided between the p-type (Alx Ga1-x )y In1-y buffer layer 3 and p-type ZnSe buffer layer 5. |
