| 摘要 |
A resist layer with a pattern having openings on portions exposed to boundaries between any two adjacent transfer gate electrodes is formed on the surface of a polycrystal silicon layer used as a material for forming the transfer gate electrodes which polycrystal silicon layer has been formed on a gate insulating layer. The polycrystal silicon layer is then etched with the resist layer used as a mask and the surface of the polycrystal silicon layer is subsequently oxidized to form silicon oxide layers between any two adjacent transfer gate electrodes for insulating the adjacent transfer gate electrodes from each other. In this way, the number of manufacturing processes can be reduced by preventing a potential pocket, which gives rise to signal charge left untransferred beneath the space between any two adjacent transfer gate electrodes, from being developed while forming the transfer gate electrodes of the electric charge transferring device into a single-layer structure. As a result, the cost of manufacturing an electric charge transferring device can be reduced and, at the same time, the non-uniformity of the thickness of the gate insulating layers beneath the transfer gate electrodes can be avoided.
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