Deep trench dram process on SOI for low leakage DRAM cell

摘要

A deep trench DRAM cell is formed on a silicon on isolator (SOI) substrate, with a buried strap formed by outdiffusion of dopant in associated trench node material, for providing an electrical connection between the trench node and the active area of a MOS transfer gate formed in the substrate adjacent the trench in an uppermost portion of the substrate.