| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a stable attracting force and to prevent the generation of contamination caused by a metallic element even when a remaining attracting force is small and contact is made with a semiconductor wafer by making at least an insulated layer of a highly pure Al2 O3 sintered compact. SOLUTION: A voltage is applied between a substrate 1 and a semiconductor wafer 3 by conducting electricity through an electrode taking-out part 1b to an internal electrode 2 and the semiconductor wafer 3 is attracted to an attracting surface 1a. For the substrate 1, an Al2 O3 sintered compact having purity of 99.9% or higher is used. In order to bury the internal electrode 2, first the Al2 O3 sintered compact is prepared by providing a substrate fist member II molded in a sheet shape as an insulated layer, then the internal electrode 2 is placed and by placing a substrate second member 12 having the electrode taking-out part 1b thereon, these are subjected together to sintering.</p> |
