| 摘要 |
The improved sputtered memory disk of the present invention comprises a substrate coated with a nucleating layer, a subsequent magnetic layer, and a protective coating. As a result of texturing in the circumferential direction and epitaxy involving the nucleating layer, an anisotropic orientation of coercivity in the circumferential direction has occurred during the sputtering that provides an improved memory disk having enhanced coercivity, a reduced amplitude modulation, an improved squareness of the hysteresis loop, e.g., lower switching field distribution, and a high production, relatively low cost production system. As a result, a higher recording density due to the higher coercivity and low switching field distribution can be experienced with the magnetic disk of the present invention.
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