| 摘要 |
This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed. |
