发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain a photoresist compsn. having high sensitivity and excellent in resolving power, developability, dry etching resistance and shelf stability especially in the production of a semiconductor device, etc., by incorporating an alkali-soluble resin, a quinone-diazido compd. and a specified compd. SOLUTION: This photoresist compsn. contains an alkali-soluble resin, a quinonediazido compd. and a compd. represented by formula I or II. In the formula I, R1 is H, halogen, etc., (n) is an integer of 1-4 and each of X1 and Y1 is a single bond, -N=CN-, etc., but X1 and Y1 are not simultaneously single bonds. In the formula II, each of X2 and X3 is O or S, Z1 is H or hydroxyl and Y2 is optionally substd. alkylene or a group represented by formula III [where X is O or S, each of R1 -R3 is H, halogen, etc., (m) is 1 or 2 and (p) is an integer of 1-4].
申请公布号 JPH09114090(A) 申请公布日期 1997.05.02
申请号 JP19950275654 申请日期 1995.10.24
申请人 FUJI PHOTO FILM CO LTD 发明人 KAWABE YASUMASA;SUZUKI NOBUO
分类号 G03F7/004;G03F7/022;G03F7/023;G03F7/039;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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