发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a part of an exposure light from being reflected on the interface between an upper photoresist layer and a lower photoresist layer (anti-reflective layer) in forming a resist pattern using a multilayer resist method. SOLUTION: Between a lower photoresist layer (anti-reflective layer) 4 containing a light absorbing agent and an upper photoresist layer 6 containing no light absorbing agent, a photoresist layer 5 containing a light absorbing agent at a density substantially intermediate between the densities in the layers 4 and 6 is provided so that a moderate gradient of density of the light absorbing agent in the entire photoresists (4, 5 and 6) is realized. Thus, an exposure light is prevented from being easily reflected on the interface between the photoresist layers.
申请公布号 JPH09115806(A) 申请公布日期 1997.05.02
申请号 JP19950269771 申请日期 1995.10.18
申请人 HITACHI LTD 发明人 FUKUMOTO YOSHIKO;ONOZUKA TOSHIHIKO
分类号 G03F7/26;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/26
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