| 摘要 |
PROBLEM TO BE SOLVED: To prepare semiconductor structure containing a self-aligned stud-up formed of a single metallic layer and an interconnection wire efficiently by filling an opening section formed to an insulator region with a metal. SOLUTION: A stud-up 32 and an interconnection wire 34 connected to the stud-up 32 are contained, and the stud-up 32 and the interconnection wire 34 are self-aligned, and formed of a single metallic layer. When such semiconductor structure is prepared, an insulator region 11 is formed onto a semiconductor substrate, and the insulator region 11 is patterned and etched by using a mask 26 for demarcating an opening section 22A in beforehand selected depth. A metal is attached for filling the opening section 22A, and the interconnection wire 34 is formed by the attaching of the metal. The stud-up 32 in desired size is patterned and formed so that the lower end of the stud-up 32 is connected to the interconnection wire 34 and the upper end of the stud-up 32 is terminated on the top face of the insulator region 11 or a section in the vicinity of the top face in the metal-filled opening section. |
