| 摘要 |
<p>PROBLEM TO BE SOLVED: To make the area of a channel formed along the sidewall of a gate polysilicon layer relatively larger than a source-contact region and a body layer by containing polysilicon films shaped onto each of gate oxide films formed onto each sidewall and bottom surface of a plurality of trenches. SOLUTION: This transistor comprises a semiconductor substrate formed onto the first regions 10 of a high-concentration semiconductor substance having a first conductivity type and composed of the second regions 12 of a low- concentration semiconductor substance having the same conductivity. The transistor is formed in structure, in which a plurality of trenches penetrated through second conductivity type diffusion layers 14, extended up to the upper sections of the second regions 12 and separated by a fixed distance, high-concentration impurity layers 14 being formed on the surfaces of the diffusion layers 14 and having the first conductivity type, and polysilicon films 20 shaped onto each of gate oxide films 18 formed onto each sidewall and bottom surface of a plurality of the trenches are contained. Accordingly, areas occupied by channels formed along the sidewalls of the polysilicon films 20 are made relatively larger than the high-concentration impurity layers 16 and the diffusion layers 14.</p> |
