| 摘要 |
An isolating method of semiconductor IC's(Integrated Circuits) is provided to simplify the processes. The isolating method comprises the steps of: forming a buried oxide layer(2) by ion-implanting an oxygen ions into a silicon substrate(1); forming a thermal oxide pattern(3) on the buried oxide layer(2); ion-implanting oxygen ions to the exposed buried oxide layer(2) using the thermal oxide pattern(3) as a mask; and annealing the implanted substrate of oxygen ions, thereby forming an isolating oxide(4) for isolating the devices.
|
