| 摘要 |
PROBLEM TO BE SOLVED: To prevent the switching point from fluctuating even when the resistance of a resistor for determining a specified voltage level (switching point), at which an internal voltage is generated by stepping down the voltage Vcc of an external power supply, is shifted from a design level. SOLUTION: A static random access memory SRAM comprises a step-down circuit 2 and an inner circuit 1. The step-down circuit 2 comprises resistors R1-R3, PMOS transistors QP1, QP2, and an NMOS transistor QN. The resistor R1-R3 comprises one or a plurality of resistor elements R having substantially identical resistance and constitution. Since the ratio (R1:R2) of the resistor R1 to the resistor R2, which determines the switching point, can be kept constant even when the process parameters are varies, the switching point can be prevented from fluctuating.
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