| 摘要 |
PROBLEM TO BE SOLVED: To stably form a transition metal silicide film having a good morphology and film quality on a Si substrate. SOLUTION: A natural oxide film 2 on the surface of the (100) or (111) plane of a Si substrate 1 is uniformly removed by the soft etching to expose a defective two- or three-atom layer 3 having a Si2×1 or Si7×7 reconfigured surface on the surface of the substrate. Then, a Ti film 4 and Co film 5 are formed on the layer 3 by the sputtering method or the like, without exposing the substrate 1 to the atmospheric air. The film 4 is 1.0-3.5nm thick for the (100) plane or 1.5-3.5nm for the (111) plane. The substrate 1 is then heat-treated at 50 deg.C, for example, to remove the layer 3 by the reaction with the film 4 and a CoSi2 film 6 is formed on the substrate 1 clear of this layer 3 by the epitaxial growth.
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