| 摘要 |
PROBLEM TO BE SOLVED: To make visible the remainder of resist remaining on a layer where plating is adhered and to rapidly set the optimum conditions of ushing by performing visual inspection after treating a resist thin film remaining on a metal layer with diluted nitric acid and then visually inspecting the resist thin film using an optical microscope. SOLUTION: After treating a resist thin film 8 remaining on a metal layer formed on a semiconductor substrate with nitric acid, the resist thin film is visually inspected by an optical microscope. For example, photoresist is applied to the entire surface of a wafer where Al pad and a layer where plating is adhered and a resist pattern 6 with an opening 6A is formed on the layer with plating by the photolithography technique. After that, the wafer is dipped in 10% nitric acid (1:10=HNO3 :H2 O) at a normal temperature for several seconds, is washed and dried, and then is visually inspected by the optical microscope, thus making visible the resist thin film 8 remaining on the opening 6A of the resist pattern 6 as shown in figure. |
