MANUFACTURE OF CVD ALUMINUM LAYER IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a chemical vapor-deposited layer having a high mirror surface property and low surface roughness. SOLUTION: A process for manufacturing CVD aluminum of semiconductor device includes the formation of a chemical vapor-deposited metallic layer 38 overlying a composite nucleating layer. The nucleating layer contains a sputtered titanium layer 34 underlying a sputtered aluminum layer 36. Both the nucleating layer and metallic layer 38 are treated in vacuum inert gas atmospheres so as to prevent the exposure of metal surfaces to atmospheric oxygen during multilevel metal treatment performed in a vacuum state. The chemical vapor-deposited metallic layer 38 indicates the high specular property and low surface roughness of the underlying sputtered composite nucleating layer.