发明名称 |
Growth of silicon single crystal from melt having extraordinary eddy flows on its surface |
摘要 |
When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N2, Xe or Kr, which causes extraoridnary deviation in the density of the melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ga, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality. <IMAGE> |
申请公布号 |
EP0733727(A3) |
申请公布日期 |
1997.05.02 |
申请号 |
EP19960104455 |
申请日期 |
1996.03.20 |
申请人 |
IZUNOME, KOJI;KAWANISHI, SOUROKU;TOGAWA, SHINJI;IKARI, ATSUSHI;SASAKI, HITOSHI |
发明人 |
IZONUME, KOJI;KAWANISHI, SOUROKU;TOGAWA, SHINJI;IKARI, ATSUSHI;SASAKI, HIROSHI;KIMURA, SHIGEYUKI |
分类号 |
C30B15/00;C30B15/20;C30B15/30;C30B29/06;H01L21/208 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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