| 摘要 |
PROBLEM TO BE SOLVED: To effectively obtain a CuInSe2 ternary alloy layer which is uniform to the end part and good by thermal processing in the atmosphere containing selenium after thin films of copper and indium are respectively formed with a chemical plating method. SOLUTION: For example, in a process in which a plurality of modules are formed on a substrate, first, a molybdenum layer 2 is patterned for dividing into square metal electrodes 2a and 2b. Then, copper plating and indium plating are performed, copper layers 3a and 3b, and an indium layer's 4a and 4b are formed for obtaining a precursor. Then, a vessel in which the precursor is thermal-processed is charged visit solid selenium for selenide, so that copper- indium-selenium ternary alloy layers 5a and 5b are obtained. The ternary alloy layers is good and contain no cracking and peeling, etc., and, satisfactory X-ray diffraction grating on the central part and the end part is obtained. |
