| 摘要 |
PROBLEM TO BE SOLVED: To obtain a non-single crystal semiconductor layer having good electric characteristics by processing an object in a laser irradiation chamber with laser light while sustaining the processing pressure at a constant level when it is reached thereby preventing the non-single crystal semiconductor layer from being mixed with impurities. SOLUTION: A silicon oxide is deposited by 3000Å, as an underlying layer, on a glass substrate 405 by plasma CVD or spattering. A starting material for active layer, i.e., amorphous silicon, is then deposited by 500Åby plasma CVD or low pressure CVD. An irradiation chamber 401 is then evacuated starting from the atmospheric pressure and when a pressure of 0.5Torr is reached, the inner pressure is fixed at that level and the amorphous silicon is irradiated with laser light emitted from a laser oscillator 402 thus crystallizing the amorphous silicon. Since the non-single crystal semiconductor layer is prevented from being mixed with impurities, a non-single crystal semiconductor layer having good electric characteristics can be obtained.
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