| 摘要 |
PROBLEM TO BE SOLVED: To reduce the degree of solid layer diffusion, by forming a P doping region which is manufactured in an organic metal vapor growth method, by magnesium doping wherein bisethylcyclopentadienylmagnesium is used as doping material. SOLUTION: An N-type InP clad layer 42, an N-type InAlGaAs clad layer 43, and an MQW active layer 44 of N<-> type InAlGaAs/InAlGaAs are formed on an N-type InP substrate 41. A P-type InAlAs clad layer 45, a P-type InP layer 46 and a P<+> type InGaAs layer 47 are laminated on the MQW active layer 44. In this growth process, all the P regions are formed by using bisethylcyclopentadienylmagnesium as P-type doping material. The diffusion constant of Mg is 5×10<-15> cm<2> s<-1> , so that solid layer diffusion is only about 0.4nm during the growth for 2 hours. As compared with the case that Zn is used as dopant, the degree of solid layer diffusion can be reduced. |
