发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT AND FORMING METHOD OF ITS RESONATOR
摘要 PROBLEM TO BE SOLVED: To prevent the generation of uneveness, crack and break, by constituting a substrate of spinel, and making a resonator of sections wherein a nitride semiconductor wafer laminated on the substrate is cut off. SOLUTION: An N-type contact layer 2, an N-type clad layer 3, an N-type optical guide layer 4, an active layer 5, a P-type optical guide layer 6 and a P-type clad layer 7 are grown in order on a single crystal spinel substrate 1. On the layer 7, a protective layer is formed, on which an N-type current blocking layer 8 and a P-type contact layer 9 are grown. A positive electrode containing Ni and Au is formed almost at the center of the P-type contact layer 9. A stripe type negative electrode containing Ti and AQ is formed on the surface of the N-type contact layer 2. In the direction rectangular to the stripe electrode, scribing is performed, and the face wherein the wafer is divided in the direction is made a resonator. Since the crystal of spinel is softer than sapphire, working is easy. Generation of unevenness, crack and break of the nitride semiconductor layer of the resonance surface of the cut-off chip can be prevented.
申请公布号 JPH09116232(A) 申请公布日期 1997.05.02
申请号 JP19950275220 申请日期 1995.10.24
申请人 NICHIA CHEM IND LTD 发明人 OZAKI NORIYA;NAKAMURA SHUJI
分类号 H01L33/06;H01L33/14;H01L33/16;H01L33/22;H01L33/32;H01L33/40;H01S5/00;H01S5/343 主分类号 H01L33/06
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