PHASE SHIFT MASK AND METHOD OF MANUFACTURING THE SAME

摘要

A phase shift mask (200) comprising a transparent portion (4) that includes a molybdenum silicide nitride or molybdenum silicide oxide film (4) having a phase difference of 180 DEG and a transmissivity of 2 % - 5 %. In the manufacture of the transparent portion, sputtering is applied to deposit the film of molydenum silicide oxide or molybdenum silicide nitride. This mask has better resolution than the conventional attenuation phase shift mask having a transmissivity of 5 % - 40 %, and prevents the deformation of resist parttern which is ascribed to the generation of side lobe around the resist pattern.