| 摘要 |
A method for preventing impurities in a semiconductor device is described. An annealing is performed when a semiconductor device is assembled after it is disjointed to be cleaned, so that it remove the impurities generated at an O-ring. The method includes a first annealing step for annealing an O-ring 5 in an oven before the O-ring 5 is jointed to a semiconductor device, and a second annealing step for annealing the O-ring 5 after the O-ring 5 is jointed thereto. The first annealing step is performed at the temperature of 150 deg. C to 250 deg. C or for 20 hours to 28 hours. The second annealing step is performed at the temperature of 600 deg. C to 800 deg. C or for 4 hoursto 6 hours. Thereby, it is possible to prevent the impurities resultingfrom the O-ring 5.
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