| 摘要 |
PURPOSE:To avoid a fixed pattern noise and a white spot caused by a crystal defect by a method wherein a P-type Si substrate is converted into an N-type substrate by the application of a neutron beam and a solid-state image pickup device is formed on that substrate. CONSTITUTION:A part of Si, which is a component element of a P-type wafer, is converted into P, which is an N-type impurity, by nucleus conversion induced by the application of a neutron beam and an Si substrate 4 whose conductivity type is converted into N-type and whose specific resistivity is, preferably, 10-100OMEGA.cm is formed. Respective devices which constitute a solid-state image pickup device, such as a photodetecting part 1, an accompanying vertical registor 2 and horizontal registor are formed on the substrate 4. With this constitution, unevenness of concentration which is created when the wafer is doped with an N-type impurity beforehand while it is growing can be avoided and the concentration can be controlled securely. Therefore, a fixed noise pattern and a white spot caused by a crystal defect can be avoided. |
