PROCESS FOR PHOTORESIST PATTERN FORMATION

摘要

A method for forming photoresist patterns forming patterns in changing exposure time according to the change of the reflection factor is disclosed. Thereby, it is possible to obtain uniform critical dimension by compensating and exposing on the basis of reflection factor previously measured according to the change or the cleaning of the substrate and the change of reflection conditions according to phothresist coating preprocessing. Further, it is possible to reduce manhour and to enhance productivity because of uniform critical dimension.