FORMING METHOD OF CONDUCTIVE LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming a conductive layer having a good profile using TEOS layer having low reflectance index is disclosed. On a conductive layer(3) such as WSi, TEOS layer(4) having low reflectance index and high etching rate is deposited. Using a first photoresist pattern(5A) defined peripheral circuit region and a second photoresist pattern(5B) defined cell regions as a mask, the exposed TEOS layer(4) is firstly etched. Then, the exposed conductive layer is secondly etched using the remained TEOS layer(4) and the photoresist patterns(5A)(5B) as a mask. By using the TEOS layer having high etch rate and low reflectance index as a hard mask, it is possible to easily make the conductive layer having a stable profile.