Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate

摘要

A semiconductor processing method of forming complementary first conductivity type doped and second conductivity type doped active regions within a semiconductor substrate includes, a) providing a semiconductor substrate; b) masking a desired first conductivity type region of the substrate while conducting second conductivity type doping into a desired second conductivity type active region of the substrate; c) providing an insulating layer over the substrate over the desired first conductivity type region and the second conductivity type doped region; d) patterning the insulating layer to provide a void therethrough to the desired first conductivity type region; e) filling the void with a first conductivity type doped polysilicon plug, the plug having a first conductivity type dopant impurity concentration of at least 1x1020 ions/cm3, the desired first conductivity type region having a first conductivity type dopant concentration prior to the filling step which is in the range of from 0 ions/cm3 to 1x1019 ions/cm3; and f) annealing the substrate for a period of time effective to out-diffuse first conductivity type dopant impurity from the first conductivity type doped polysilicon plug into the substrate to form the desired first conductivity type active region having a first conductivity type dopant impurity concentration of at least 1x1020 ions/cm3 in the substrate. Methods of forming CMOS FET transistors, and SRAM and DRAM CMOS circuitry are also disclosed.