发明名称 THIN FILM AVALANCHE PHOTODIODE
摘要 A light emitting device of a thin film field effect is described that can reduce a driving voltage by forming a strong dielectric buffer layer and improve the characteristic between a brightness and voltage. The light emitting device includes a transparent electrode 12, first insulating layer 13, light emitting layer 14, buffer layer 20 composed of strong dielectric material, second insulating layer 15-1 and 15-2, and metal electrode 6, which are formed over a glass substrate 11. The buffer layer 20 is composed of SrTiO3 and has a thickness not more than 2000 angstrom. The second insulating layer 15-1 and 15-2 are made of composite with two layers. Thereby, it is possible to make the driving of the device easy.
申请公布号 KR970006611(B1) 申请公布日期 1997.04.29
申请号 KR19930027650 申请日期 1993.12.14
申请人 LG SEMICONDUCTOR CO.,LTD 发明人 JUNG, JAE-SANG
分类号 H01L33/00;(IPC1-7):H01L31/12 主分类号 H01L33/00
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