| 发明名称 |
Method for fabricating electron multipliers |
| 摘要 |
A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.
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| 申请公布号 |
US5624706(A) |
申请公布日期 |
1997.04.29 |
| 申请号 |
US19950440754 |
申请日期 |
1995.05.15 |
| 申请人 |
ELECTRON R+D INTERNATIONAL, INC. |
发明人 |
GOUKASSIAN, SAMUEL |
| 分类号 |
C23C14/06;C23C14/24;C23C14/50;H01J9/12;H01J43/10;H01J43/24;(IPC1-7):B05D5/12 |
主分类号 |
C23C14/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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