发明名称 |
High-speed double-heterostructure bipolar transistor devices |
摘要 |
The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.
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申请公布号 |
US5625206(A) |
申请公布日期 |
1997.04.29 |
申请号 |
US19960657255 |
申请日期 |
1996.06.03 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
CHANDRASEKHAR, S.;DENTAI, ANDREW G.;MIYAMOTO, YASUYUKI |
分类号 |
H01L29/737;(IPC1-7):H01L29/201 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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