| 摘要 |
PCT No. PCT/FR95/00433 Sec. 371 Date Nov. 27, 1995 Sec. 102(e) Date Nov. 27, 1995 PCT Filed Apr. 5, 1995 PCT Pub. No. WO95/27996 PCT Pub. Date Oct. 19, 1995In order to increase the implantation energy of an ion implanter of the medium-current type, a microwave generator, having a traveling-wave tube generating an electromagnetic field with a frequency greater than or equal to 6 GHz, is arranged in the implanter; the initial ion source of the implanter is replaced by an electron cyclotron resonance multiply-charged ion source (3) including a waveguide-forming plasma cavity (21) whose characteristic dimension (D), in the transverse plane of the cavity, is of the same order of magnitude as the wavelength of the electromagnetic field; the microwave generator (60) and the plasma cavity (21) of the multiply-charged ion source are electromagnetically coupled; a complex gaseous medium, compatible with the beam of ions desired, is admitted into the plasma cavity and the inlet flow rate of the gaseous medium is adjusted so as to maintain a residual vacuum in the plasma cavity which is less than a pressure threshold compatible with the production of multiply-charged ions; and the focusing of the ion beam extracted from the plasma cavity is adjusted onto the focal point of the scanning magnet (7) of the implanter.
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