发明名称 |
SRAM cell with balanced load resistors |
摘要 |
SRAM cells are manufactured with balanced, high-resistance load resistances by having substantially all of dielectric layer directly over the polysilicon load resistor covered by a metal layer. The metal layer protects the polysilicon during subsequent processing which can adversely alter its characteristics.
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申请公布号 |
US5625215(A) |
申请公布日期 |
1997.04.29 |
申请号 |
US19950413014 |
申请日期 |
1995.03.28 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
CHEN, MIN-LIANG;JUENGLING, WERNER |
分类号 |
H01L27/04;H01L21/822;H01L21/8244;H01L27/11;(IPC1-7):H01L27/11 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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