发明名称 |
Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology |
摘要 |
A process for applying a TiN contact/via adhesion layer to high aspect ratio contact/via openings etched in a dielectric comprises providing a first layer of TiN on the bottom of the contact/via openings and then depositing the second layer of TiN on the first layer of TiN and on the sidewalls of the contact/via openings. The second layer of TiN serves as the contact/via adhesion layer for structurally supporting the adhesion of a tungsten plug in the contact/via openings. In the case where a contact is etched in the dielectric down to a junction with a titanium silicide layer on top, the first layer of TiN on the bottom of the contact opening is provided by a rapid thermal anneal in a nitrogen-containing atmosphere which converts the top part of the titanium silicide layer in the contact into a barrier TiN layer. Alternatively, in the case where a contact is etched in the dielectric down to an underlying barrier TiN layer, the first layer of TiN on the bottom of the contact opening can be provided by a contact etch which is able to stop on an underlying barrier TiN layer with minimum TiN loss. In the case where a via is etched in the dielectric down to an underlying TiN anti-reflection coating on top of a metal layer, the first layer of TiN on the bottom of the via is provided by a via etch which is able to stop on the underlying TiN anti-reflection coating on top of the metal layer with minimum TiN loss.
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申请公布号 |
US5625231(A) |
申请公布日期 |
1997.04.29 |
申请号 |
US19950402254 |
申请日期 |
1995.03.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUANG, RICHARD J.;CHEUNG, ROBIN W. |
分类号 |
H01L23/485;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L29/41 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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