Method and apparatus for measuring the temperature of an object, in particular a semiconductor, by ellipsometry

摘要

PCT No. PCT/FR93/01142 Sec. 371 Date Jul. 26, 1995 Sec. 102(e) Date Jul. 26, 1995 PCT Filed Nov. 19, 1993 PCT Pub. No. WO94/12857 PCT Pub. Date Jun. 9, 1994A method of measuring the surface temperature of an object. The method includes performing ellipsometric measurements on the object in order to determine at least first and second photon energies (E1, E2) for an electromagnetic beam at which measurements are respectively substantially independent of temperature and dependent on temperature. The method further includes creating and directing to the object, an electromagnetic incident beam including at least the first and second photon energies (E1, E2). The change in polarization at the first photon energy (E1) is measured and the thickness of the layer of material is determined on the basis of this measurement. The surface temperature of the object can then be determined on the basis of the measured change in polarization at the second photon energy (E2) of the beam, while taking account of the thickness of the layer of material.