发明名称 Method of making a mask ROM with a groove
摘要 The mask ROM of the present invention is manufactured in the following processes; forming a cell array in which all the cells will be driven as on-cells, forming a groove by etching some portions of the semiconductor substrate in the drain region of the specific on-cell among the on-cells on customer's request, and then practicing a source and drain ion implantation process.
申请公布号 US5624862(A) 申请公布日期 1997.04.29
申请号 US19960614802 申请日期 1996.03.07
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO. LTD. 发明人 AN, JAE C.
分类号 H01L21/768;H01L21/8246;H01L27/10;(IPC1-7):H01L21/824 主分类号 H01L21/768
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