发明名称 SEMICONDUCTOR LIGHT DETECTOR
摘要 FIELD: instruments, in particular, automatic control devices for manufacturing. SUBSTANCE: device method involves conversion of capacitance to frequency. To achieve this field photo transistors are used as oscillation circuit capacitance elements which are controlled by light while passive inductance coil is used as inductance of oscillation circuit. This results in possibility to gain negative voltage at drain- drain terminals of field-effect photo transistors when control voltage is applied. This results in generation of electric oscillations in parallel circuit of capacitor-feature impedance on drain-drain terminals of field-effect photo transistors and inductance resistance of passive inductance coil. When light is received by field-effect photo transistors, capacitance constituent of impedance at drain- drain terminals is altered and resonant frequency of circuit is changed. EFFECT: increased sensitivity and increased precision. 1 dwg
申请公布号 RU94028635(A) 申请公布日期 1997.04.27
申请号 RU19940028635 申请日期 1994.07.29
申请人 OSADCHUK V.S.;OSADCHUK E.V.;OSADCHUK A.V. 发明人 OSADCHUK V.S.;OSADCHUK E.V.;OSADCHUK A.V.
分类号 H01L27/144;H01L31/10 主分类号 H01L27/144
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