发明名称 CMOS integrated semiconductor circuit device, e.g. logic circuit of microprocessor
摘要 The circuit includes a logic circuit (11), a control unit (12), and respective circuits for producing a high voltage (13) and a low voltage (14). Also provided are selecting circuits (15,16), a power or voltage supply (VDD), an earth (GND), a potential (VDDV), a potential ground (GNDV), a p-channel transistor (Q1) and an n-channel transistor (Q2). The logic circuit contains a NOT-AND gate (11a) and is connected between the VDD and GND voltage supplies via two transistors respectively (Q1,Q2) controlled by the control unit. The control unit is connected through signal line (S1) with the selecting circuit (15) and through signal lines (S1,S2) to the gates of each of the two transistors via the selecting circuits (15,16). The control unit gives a defined signal to selecting circuits when the respective transistors are to be operated in a non conductive state when the logic circuit is in a standby state. The signals supplied by the respective selecting circuits have a magnitude greater than the original supply voltages.
申请公布号 DE19642915(A1) 申请公布日期 1997.04.24
申请号 DE19961042915 申请日期 1996.10.17
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 MASHIKO, KOICHIRO, TOKIO/TOKYO, JP
分类号 H01L27/088;G11C11/407;H01L21/8234;H01L27/02;H03K17/16;H03K19/00;H03K19/0175;H03K19/0948;(IPC1-7):H03K19/094;H03K17/687;H01L27/04 主分类号 H01L27/088
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