METHOD AND DEVICE FOR DETECTING END POINT OF PLASMA TREATMENT, METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

The wavelength components (27) of an active species are extracted from the light (24) emitted from a plasma, and only the frequency components synchronous with the high-frequency power for plasma excitation are extracted by means of a synchronous detection circuit (30) or the like, in order to allow the device to always stably detect the end point of plasma treatment with high accuracy without receiving any influence from the very fine pattern to be treated and disturbance. The progress of plasma treatment is recognized more accurately and the signal change at the end point is clear and the end point of plasma treatment of a very small opening pattern is detected with high accuracy.