| 摘要 |
A buried-ridge structure of the quaternary/tertiary structures of InxGa1-xAsyP1-y/InGaP (x and y < 1) are grown on a GaAs substrate by Low Pressure Metalorganic Chemical Vapor Deposition (LP-MOCVD) in a two-step process. The process comprises steps of growing and doping the requisite epitaxial layers, etching these layers so that stripes or mesas of material remain and then regrowing the material by gas molecular beam epitaxy (GSMBE). The structures are then processed into devices.
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