发明名称 METALS REMOVAL PROCESS
摘要 A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800 DEG C or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.
申请公布号 WO9715069(A1) 申请公布日期 1997.04.24
申请号 WO1996US16731 申请日期 1996.10.18
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;SAWIN, HERBERT, H.;CHANG, JANE;LAWING, ANDREW, SCOTT;ZHANG, ZHE;XU, HAN 发明人 SAWIN, HERBERT, H.;CHANG, JANE;LAWING, ANDREW, SCOTT;ZHANG, ZHE;XU, HAN
分类号 H01L21/302;B08B7/00;C23F1/12;C23F4/00;H01L21/28;H01L21/304;H01L21/306;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/00;C23F1/00 主分类号 H01L21/302
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