| 摘要 |
<p>A method for producing a semiconductor device having a semiconductor layer (2) of SiC comprises at least the steps of applying an insulating layer (1) on said semiconductor layer, implantation of an impurity dopant into said semiconductor layer and annealing this layer at such a high temperature that the implanted impurities are activated. Said insultating layer is applied before and maintained on said semiconductor layer during said annealing step. A material having AlN as major component is applied on said semiconductor layer as said insulating layer.</p> |
