Verfahren zur Abscheidung einer hochdotierten Polysiliciumschicht auf eine stufenförmige Halbleiterwaferfläche, welches verbesserte Stufenbeschichtung liefert,申请号DE19916025215-传众专利搜索

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发明名称	Verfahren zur Abscheidung einer hochdotierten Polysiliciumschicht auf eine stufenförmige Halbleiterwaferfläche, welches verbesserte Stufenbeschichtung liefert
摘要
申请公布号	DE69125215(D1)	申请公布日期	1997.04.24
申请号	DE19916025215	申请日期	1991.07.08
申请人	APPLIED MATERIALS, INC., SANTA CLARA, CALIF., US	发明人	BEINGLASS, ISRAEL, SUNNYVALE, CALIFORNIA 94087, US
分类号	H01L21/205;H01L21/02;H01L21/225;H01L21/3205;(IPC1-7):H01L21/768;H01L21/334;H01L21/285;H01L21/320	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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