Process for manufacturing EEPROM memory cells having a single level of polysilicon and thin oxide by using differential oxidation,申请号EP19900202302-传众专利搜索

发明名称	Process for manufacturing EEPROM memory cells having a single level of polysilicon and thin oxide by using differential oxidation
摘要
申请公布号	EP0416687(B1)	申请公布日期	1997.04.23
申请号	EP19900202302	申请日期	1990.08.28
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.	发明人	GHEZZI, PAOLO;RIVA, CARLO;VALENTINI, GRAZIA
分类号	H01L21/28;H01L21/316;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336	主分类号	H01L21/28
代理机构		代理人
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