Mask for adjusting line width of photoresist pattern

摘要

A mask used in photolithography includes a transparent substrate, a light-shielding pattern (31) for defining a transmitting region on the transparent substrate, and a transmittance adjusting film pattern (32) added on a portion of a transmitting region for decreasing transmittance of a first transmitting part for transmission of light to a first region of a substrate with respect to the transmittance of a second transmitting part for transmission of light to a second region of the substrate, the mask being adapted for use when the thickness of photoresist in the second region is thicker than that in the first region on the semiconductor substrate. A pattern for use in a highly integrated semiconductor device can be formed by adjusting the light intensity.