Thin-film structure with insulating and smoothing layers between crossing conductive lines.

摘要

A thin-film structure (10) includes conductive lines (12,14) that cross in a crossover region (16). A first insulating layer (40) covers the lower conductive line (12). A second insulating layer (42) is sufficiently thick to isolate signals in the lines and to prevent coupling. Each of the lower conductive line (12) and the second insulating layer (42) can have an edge. A smoothing layer (44) is formed over the edges so that the upper conductive line (14) forms continuously, providing an electrical connection between two points on opposite sides of the edges. The insulating layers (40,42) can be nitride, separated by an undoped layer of amorphous silicon, so that the same layer sequence can be used as in a thin-film transistor. The smoothing layer can be n+ doped amorphous silicon. The conductive lines can be scan and data lines in an AMLCD or other array.