| 摘要 |
<p>PROBLEM TO BE SOLVED: To carry out pattern formation without using a mask and lower the cost by providing fine spherical bodies randomly in a pattern on a dielectric layer formed on a silicon layer. SOLUTION: A silicon layer 810 is formed on a glass or quartz substrate 800 by deposition and oxidized to form an oxide dielectric body 820 layer. Fine spherical bodies 830 are deposited in a randomly separated pattern on the dielectric layer. Further, the pattern of the fine spherical bodies 830 is transferred to the dielectric body 820 by anisotropic etching method to form island parts. Emitters 812 having sharp tip parts are formed at the positions where the island parts exist are formed by etching and deposition steps to give a display structure body. The structure body however is not a strictly geometric array but consists emitters at random intervals. In this way, without using a mask, self-aligned pattern formation with high density can be carried out and the cost is lowered.</p> |
