发明名称 METHOD OF TESTING SEMICONDUCTOR LASER AND TESTING DEVICE
摘要 PROBLEM TO BE SOLVED: To check inside degradation of a laser diode by comparing the width of an emitted natural emission light spectrum with the width of the natural emission light spectrum emitted from the good quality laser diode by driving the laser diodes. SOLUTION: When there is a dark part 10 inside an optical waveguide part 2, the intensity modulation caused by the dark part 10 is superposed with the natural emission light spectrum, so that the differenceΔPd between the maximum value and the minimum value of the natural emission light spectrum is larger than the differenceΔP between those of the natural emission light spectrum of a laser chip 6 that is without the dark part 10. The good or bad of laser chips 6 is evaluated by comparing the widthΔP1 of the natural emission light spectrum of the testing laser chips 6 with the widthΔP of the light spectrum of the good laser chip. Based upon the test result, the good or the bad are marked on the laser chips 6.
申请公布号 JPH09107154(A) 申请公布日期 1997.04.22
申请号 JP19950261761 申请日期 1995.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAMISATO TAKESHI
分类号 G01M11/00;H01L21/66;H01S3/00;H01S5/00;(IPC1-7):H01S3/18 主分类号 G01M11/00
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