| 摘要 |
PROBLEM TO BE SOLVED: To provide complementary thin film transistors of which the absolute values of threshold voltages have mutually different dependences on the thickness of silicon thin films, and which have silicon films in respective channel regions of thickness not more than a predetermined film thickness and having good characteristics which little differ from each other. SOLUTION: In complementary thin film transistors, the width of a silicon thin film tsi is set smaller than both maximum widthsχPmax andχNmax of depletions layers in P and N channel-type thin film transistors, respectively and not more than 0.1μm. With this arrangement, threshold voltages of the transistors are reduced. The reduced threshold voltages make it possible to reduce drive voltages of the thin film transistors and to provide higher current when the transistors are on. Consequently, it makes it possible to facilitate using the thin film transistors and to realize high speed operation of the transistors.
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