发明名称 |
Gettering of metals from solution |
摘要 |
A process and a gettering agent for gettering metals from a solution. In the process, the solution is contacted with a gettering agent having a surface layer of SiO2, the layer of SiO2 preferably being greater than 15 angstroms in thickness.
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申请公布号 |
US5622568(A) |
申请公布日期 |
1997.04.22 |
申请号 |
US19940259052 |
申请日期 |
1994.06.13 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
SHIVE, LARRY W.;PIROOZ, SAEED |
分类号 |
B01D15/00;B01J20/10;(IPC1-7):C02F1/42 |
主分类号 |
B01D15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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