SOLID-STATE ARRAY DEVICE CONTAINING AUXILIARY DIELECTRIC LAYER IN CROSSING REGION

摘要

PROBLEM TO BE SOLVED: To reduce noise in an array by providing a robust dielectric structure between address lines in an intersecting region within an array while sustaining the performance of a thin film transistor TFT and reducing the capacitance of data line. SOLUTION: An imaging device has an auxiliary dielectric layer 170 for intersecting region interposed between a scan line 140 and a data line 150. The scan line 140 is arranged on a substrate 105 of glass or the like. A typical auxiliary dielectric layer 170 is arranged directly on the scan line 140 and a gate dielectric layer 136 is arranged on the dielectric layer 170. A gate dielectric layer 136 is typically arranged to traverse an array such that the scan line 140 is insulated electrically from other compositional element of array. According to the structure, capacitance of the data line contributive significantly to noise can be reduced in an imaging device having large area.